SURFACE QUANTUM OSCILLATIONS IN (100) INVERSION LAYERS UNDER UNIAXIAL STRESS

被引：20

作者：

EISELE, I ^{[1
]}

GESCH, H ^{[1
]}

DORDA, G ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

关键词：

D O I：

10.1016/0038-1098(76)91775-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：743 / 746

页数：4

共 10 条

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[4]

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[5]

OHKAWA FJ, 1975, AUG P INT C EL PROP

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ROTH LM, 1966, SEMICONDUCT SEMIMET, V1, P159

[7] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].

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SMITH, JL ;

STILES, PJ .

[9]

STERN F, COMMUNICATION

[10] PROPERTIES OF CARRIERS AT SI-SIO2 INTERFACE IN MOSFET STRUCTURES [J].

STILES, PJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :958-961