PROPERTIES OF CARRIERS AT SI-SIO2 INTERFACE IN MOSFET STRUCTURES

被引：2

作者：

STILES, PJ ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.1318713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：958 / 961

页数：4

共 28 条

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[6]

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FANG, FF ;

STILES, PJ .

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[8]

FANG FF, UNPUBLISHED

[9] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J].

FOWLER, AB ;

FANG, FF ;

HOWARD, WE ;

STILES, PJ .

[10]

FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331