SCATTERING OF CHARGE-CARRIERS IN SILICON SURFACE-LAYERS

被引：34

作者：

CHENG, YC ^{[1
]}

SULLIVAN, EA ^{[1
]}

机构：

[1] BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：923 / 925

页数：3

共 10 条

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[2]

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[3]

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[4] SEMICONDUCTOR INVERSION LAYERS AND PHONONS IN HALF-SPACE [J].

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NAKAMURA, K ;

EZAWA, H .

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[5] EFFECTIVE SURFACE MOBILITY THEORY [J].

RUTLEDGE, JL ;

ARMSTRONG, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :215-+

[6] GALVANOMAGNETIC EFFECTS IN SILICON SURFACE INVERSION LAYERS [J].

SAKAKI, H ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) :1016-&

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[8]

STERN F, 1970, 10 P INT C PHYS SEM, P451

[9]

SUGANO T, 1970, SUPPL J JAPAN SOC AP, V39, P192

[10]

Ziman J., 1967, ELECTRONS PHONONS

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