EFFECTIVE SURFACE MOBILITY THEORY

被引：17

作者：

RUTLEDGE, JL

ARMSTRONG, WE

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 02期

关键词：

D O I：

10.1016/0038-1101(72)90055-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：215 / +

页数：1

共 17 条

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[3] IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS [J].

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[4]

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COLMAN, D ;

BATE, RT ;

MIZE, JP .

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[6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[7] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[8]

KAWAJI S, 1966, J PHYS SOC JPN, VS 21, P336

[9]

KAWAZU S, 1969, JAPANESE PHYSICS I

[10] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

LEISTIKO, O ;

GROVE, AS ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) :248-+

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