GALVANOMAGNETIC EFFECTS IN SILICON SURFACE INVERSION LAYERS

被引：36

作者：

SAKAKI, H

SUGANO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 08期

关键词：

D O I：

10.1143/JJAP.10.1016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1016 / &

共 28 条

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