EFFECTS OF HIGHER SUB-BAND OCCUPATION IN (100) SI INVERSION LAYERS

[1] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[2] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[3] FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331

[4] ELECTRON-ELECTRON INTERACTIONS CONTINUOUSLY VARIABLE IN RANGE 2.1 GREATER THAN RS GREATER THAN 0.9 [J]. PHYSICAL REVIEW LETTERS, 1972, 29 (02) : 102 - +

[5] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[6] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[7] OBSERVATION OF HIGHER SUB-BAND IN N-TYPE (100) SI INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (21) : 1468 - 1471

[8] EFFECT OF ELECTRON-ELECTRON INTERACTION ON EXCITATION-ENERGIES OF AN N-INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (09) : 598 - 601

[1] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[2] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[3] FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331

[4] ELECTRON-ELECTRON INTERACTIONS CONTINUOUSLY VARIABLE IN RANGE 2.1 GREATER THAN RS GREATER THAN 0.9 [J]. PHYSICAL REVIEW LETTERS, 1972, 29 (02) : 102 - +

[5] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[6] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[7] OBSERVATION OF HIGHER SUB-BAND IN N-TYPE (100) SI INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (21) : 1468 - 1471

[8] EFFECT OF ELECTRON-ELECTRON INTERACTION ON EXCITATION-ENERGIES OF AN N-INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (09) : 598 - 601