VALLEY DEGENERACY AND INTERSUBBAND SPECTROSCOPY IN SILICON INVERSION-LAYERS

被引：9

作者：

COLE, T

机构：

来源：

SURFACE SCIENCE | 1982年 / 113卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90561-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：41 / 49

页数：9

共 18 条

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[4]

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[7] EXCHANGE-CORRELATION EFFECTS IN SILICON (111) INVERSION-LAYERS - STRAIN-ENHANCED VALLEY-OCCUPANCY PHASE-TRANSITION [J].

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[9] ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

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PHYSICAL REVIEW B, 1977, 15 (04) :1974-1982

[10] OPTICAL-PROPERTIES OF CHARGE-DENSITY-WAVE GROUND-STATES FOR INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW B, 1977, 15 (04) :1983-1987

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