JUNCTION ELECTROLUMINESCENCE IN CULNSE2

被引：46

作者：

MIGLIORATO, P

TELL, B

SHAY, JL

KASPER, HM

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 05期

关键词：

D O I：

10.1063/1.1655162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：227 / 228

页数：2

相关论文

共 7 条

[1] MINIATURE DIODE-PUMPED ND-YAIG LASERS
CHESLER, RB
DRAEGERT, DA
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 235 - 236
[2] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES
KECK, DB
MAURER, RD
SCHULTZ, PC
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (07) : 307 - 309
[3] ELECTRONIC-STRUCTURE OF AGINSE2 AND CUINSE2
SHAY, JL
TELL, B
KASPER, HM
SCHIAVONE, LM
[J]. PHYSICAL REVIEW B, 1973, 7 (10) : 4485 - 4490
[4] CDSNP2-INP HETERODIODES FOR NEAR-INFRARED LIGHT-EMITTING DIODES AND PHOTOVOLTAIC DETECTORS
SHAY, JL
BACHMANN, KJ
BUEHLER, E
WERNICK, JH
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 226 - 228
[5] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LPE FROM SN SOLUTIONS
SHAY, JL
BACHMANN, KJ
BUEHLER, E
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 192 - 194
[6] STILLMAN GE, 1972, 2 LINC LAB SOL STAT, P1
[7] ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS
TELL, B
SHAY, JL
KASPER, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2469 - &