THEORY OF VALLEY SPLITTING IN AN N-CHANNEL (100) INVERSION LAYER OF SI .2. ELECTRIC BREAK THROUGH

被引：83

作者：

OHKAWA, FJ

UEMURA, Y

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

[2] UNIV TOKYO,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1977年 / 43卷 / 03期

关键词：

D O I：

10.1143/JPSJ.43.917

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：917 / 924

页数：8

相关论文

共 17 条

[1] THEORY OF OSCILLATORY G-FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC-FIELDS
ANDO, T
UEMURA, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (04) : 1044 - 1052
[2] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &
[3] MAGNETIC BREAKDOWN IN CRYSTALS
COHEN, MH
FALICOV, LM
[J]. PHYSICAL REVIEW LETTERS, 1961, 7 (06) : 231 - &
[4] MECHANICAL-STRESS INFLUENCE ON EFFECTIVE MASSES IN SI INVERSION LAYERS
EISELE, I
GESCH, H
DORDA, G
[J]. SURFACE SCIENCE, 1976, 58 (01) : 169 - 177
[5] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND
HENSEL, JC
HASEGAWA, H
NAKAYAMA, M
[J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &
[6] QUANTUM GALVANOMAGNETIC PROPERTIES OF N-TYPE INVERSION LAYERS ON SI(100) MOSFET
KAWAJI, S
WAKABAYASHI, J
[J]. SURFACE SCIENCE, 1976, 58 (01) : 238 - 245
[7] LAKHANI AA, COMMUNICATION
[8] LANDWEHR G, COMMUNICATION
[9] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS
LUTTINGER, JM
KOHN, W
[J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883
[10] NARITA K, 1974, 12TH P INT C PHYS SE, P719