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WET ETCH PROCESS FOR PATTERNING INSULATORS SUITABLE FOR EPITAXIAL HIGH-TC SUPERCONDUCTING THIN-FILM MULTILEVEL ELECTRONIC-CIRCUITS
被引:35
作者:
EIDELLOTH, W
GALLAGHER, WJ
ROBERTAZZI, RP
KOCH, RH
OH, B
SANDSTROM, RL
机构:
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词:
D O I:
10.1063/1.105469
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We describe a wet etch process for patterning insulators suitable for multilayer epitaxial high T(c) superconductor-insulator-superconductor structures down to micrometer-scale dimensions. A solution of 7% HF in water gives convenient etch rates for SrTiO3 and MgO insulators (about 1500 angstrom/min for single crystals), and easily stops on thin high T(c) superconducting layers, due to the high selectivity of this etchant between these insulators and the cuprate superconductors. Using entirely wet etching patterning processes, we have fabricated 5-turn (20-turn) coils with zero resistance at 89 K (79 K) and critical currents at 77 K of 2.5 mA (6-mu-A).
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页码:1257 / 1259
页数:3
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