NEW METHODS FOR CARRIER LIFETIME MEASUREMENTS IN P-PI-N STRUCTURES

[1] PULSE-METHOD FOR MEASURING CARRIER-LIFETIME IN MIDDLE REGION OF PIN STRUCTURES [J]. REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (01): : 19 - +

[2] BARSUKOV YK, 1958, SOV PHYS-TECH PHYS, P806

[3] USE OF MICROWAVE TECHNIQUES FOR MEASURING CARRIER LIFETIME AND MOBILITY IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 417 - +

[4] KINGSTON RH, 1954, IRE, P829

[5] McKelvey JP, SOLID STATE SEMICOND

[6] Moll J. L., 1962, P IRE, V50, P43

[7] SCHWARTZ L, METHODES MATHEMATIQU

[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[9] RECOMBINATION IN SILICON P-PI-N DIODES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (02) : 145 - &

[1] PULSE-METHOD FOR MEASURING CARRIER-LIFETIME IN MIDDLE REGION OF PIN STRUCTURES [J]. REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (01): : 19 - +

[2] BARSUKOV YK, 1958, SOV PHYS-TECH PHYS, P806

[3] USE OF MICROWAVE TECHNIQUES FOR MEASURING CARRIER LIFETIME AND MOBILITY IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 417 - +

[4] KINGSTON RH, 1954, IRE, P829

[5] McKelvey JP, SOLID STATE SEMICOND

[6] Moll J. L., 1962, P IRE, V50, P43

[7] SCHWARTZ L, METHODES MATHEMATIQU

[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[9] RECOMBINATION IN SILICON P-PI-N DIODES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (02) : 145 - &