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FREE CARRIER AND LATTICE-HEATING-INDUCED CHANGES TO THE REFLECTIVITY OF EPITAXIAL GESI ALLOYS FOLLOWING PICOSECOND PULSE EXCITATION

被引：5
作者：
OTHONOS, A
VANDRIEL, HM
YOUNG, JF
BARIBEAU, JM
机构：
[1] ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO M5S 1A7,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 05期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1016/0038-1098(92)90361-C
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Transient reflectivity characteristics for epitaxial Ge1-xSix (x = 0, 0.05, 0.1, 0.25) alloys have been measured at lambda = 0.575-mu-m, using 2ps pump and probe pulses with photogenerated carrier densities up to 10(19) cm-3. For all x we are able to separately determine negative (free carrier) and positive (lattice heating) contributions to the reflectivity change; the relative contributions of the latter are found to increase with increasing x. The evolution of the free carrier part is dominated by carrier-temperature-dependent diffusion.
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页码：325 / 328
页数：4
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