共 14 条
- [1] ARCHER RJ, 1956, PHYS REV, V110, P354
- [2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
- [4] PROPERTIES OF SILICON AND GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1327 - 1337
- [5] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300
- [6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
- [8] EXCESS CARRIERS INDUCED IN INDIUM-ANTIMONIDE WITH A CARBON-DIOXIDE LASER [J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2857 - 2868
- [9] GALKIN GN, 1968, JETP LETT-USSR, V7, P69
- [10] GALKIN GN, 1968, PISMA ESKP TEOR FIZ, V7, P93