EXCESS CARRIERS INDUCED IN INDIUM-ANTIMONIDE WITH A CARBON-DIOXIDE LASER

被引：22

作者：

FOSSUM, HJ

CHEN, WS

ANCKERJO.B

机构：

[1] BOEING AEROSP CO, SEATTLE, WA 98124 USA

[2] UNIV WASHINGTON, SEATTLE, WA 98195 USA

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.8.2857

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2857 / 2868

页数：12

共 16 条

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[3]

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[4]

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[5]

DANISHEVSKII AM, 1969, SOV PHYS JETP-USSR, V29, P781

[6] 2-PHOTON EXCITATION RATE IN INDIUM-ANTIMONIDE [J].

FOSSUM, HJ ;

CHANG, DB .

PHYSICAL REVIEW B, 1973, 8 (06) :2842-2849

[7]

FOSSUM HJ, 1973, PHYS REV B, V8, P2850

[8] PHOTOCONDUCTIVITY IN INDIUM ANTIMONIDE AT 10.6 MUM WAVELENGTH [J].

GIBSON, AF ;

KENT, MJ ;

KIMMITT, MF .

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[9]

HILSUM C, 1961, SEMICONDUCTING III V

[10] INSB CARRIER LIFETIME IN HIGH ELECTRIC FIELD [J].

HONGO, S ;

PANYAKEOW, S ;

SHIRAFUJI, J ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) :717-+

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