INSB CARRIER LIFETIME IN HIGH ELECTRIC FIELD

被引：10

作者：

HONGO, S

PANYAKEOW, S

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 06期

关键词：

D O I：

10.1143/JJAP.10.717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：717 / +

页数：1

共 7 条

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[2] PHOTOCONDUCTIVITY IN INDIUM ANTIMONIDE AT 10.6 MUM WAVELENGTH [J].

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[4] MULTIPHOTON PLASMA PRODUCTION AND STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

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FRISCH, HL .

PHYSICAL REVIEW LETTERS, 1966, 16 (22) :971-&

[5] MULTIPHOTON-INJECTED PLASMAS IN INSB [J].

SLUSHER, RE ;

GIRIAT, W ;

BRUECK, SRJ .

PHYSICAL REVIEW, 1969, 183 (03) :758-+

[6] CARRIER LIFETIME IN INDIUM ANTIMONIDE [J].

WERTHEIM, GK .

PHYSICAL REVIEW, 1956, 104 (03) :662-664

[7] RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE [J].

ZITTER, RN ;

STRAUSS, AJ ;

ATTARD, AE .

PHYSICAL REVIEW, 1959, 115 (02) :266-273

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