LOW FIELD INJECTION IN N-INSB

被引：19

作者：

ANCKERJOHNSON, B

DICK, CL

机构：

[1] Boeing Scientific Research Laboratories, University of Washington, Seattle

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 05期

关键词：

D O I：

10.1063/1.1652941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contrary to a widely accepted notion, considerable plasma injection occurs in n-InSb at 77°K subjected to low electric field strengths (e.g., 20 V/cm) and fitted with Ohmic" contacts (indium solder). © 1969 The American Institute of Physics."

引用

页码：141 / +

页数：1

共 9 条

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[2] MICROWAVE EMISSION FROM NONEQUILIBRIUM PLASMAS IN INSB SUBJECT TO MAGNETIC FIELDS [J].

ANCKERJOHNSON, B .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) :3365-+

[3]

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[4]

ANCKERJOHNSON B, 1963 P INT C PHYS SE

[5] MICROWAVE EMISSION FROM INDIUM ANTIMONIDE (77 DEGREES K ELECTRIC AND MAGNETIC FIELD EFFECTS E ]= 12 V/CM H ]= 1500 G E) [J].

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[6]

GEORGE EV, 1969, B AM PHYS SOC, V14, P749

[7]

KINO GS, 1969, B AM PHYS SOC, V14, P749

[8] HOT CARRIER DOUBLE INJECTION IN N-INSB [J].

TOSIMA, S ;

ANDO, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 23 (04) :812-&

[9] MICROWAVE EMISSION FROM INDIUM ANTIMONIDE STIMULATED BY ACOUSTIC WAVE AMPLIFICATION [J].

TURNER, CW .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4246-&

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