HOT CARRIER DOUBLE INJECTION IN N-INSB

被引:19
作者
TOSIMA, S
ANDO, K
机构
关键词
D O I
10.1143/JPSJ.23.812
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:812 / &
相关论文
共 13 条
[1]   PROPERTIES OF INJECTED PLASMAS IN INDIUM ANTIMONIDE [J].
ANCKERJOHNSON, B ;
COHEN, RW ;
GLICKSMAN, M .
PHYSICAL REVIEW, 1961, 124 (06) :1745-&
[2]  
CUNNINGHAM RW, 1963, D1820306 BOEING REP
[3]   HOT ELECTRONS IN INDIUM ANTIMONIDE [J].
GLICKSMAN, M ;
HICINBOTHEM, WA .
PHYSICAL REVIEW, 1963, 129 (04) :1572-+
[4]   THEORY OF DOUBLE INJECTION INTO A SEMICONDUCTOR OF FINITE CROSS-SECTION [J].
HIROTA, R ;
TOSIMA, S ;
LAMPERT, MA .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (04) :535-&
[5]   DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].
HOLONYAK, N .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&
[6]   DOUBLE INJECTION IN INSULATORS [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1962, 125 (01) :126-&
[7]   VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J].
LAMPERT, MA ;
ROSE, A .
PHYSICAL REVIEW, 1961, 121 (01) :26-&
[8]   A REVERSED CARRIER TRANSPORT EFFECT IN GERMANIUM [J].
PRIOR, AC .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (490) :465-480
[10]   AVALANCHE BREAKDOWN-DOUBLE INJECTION INDUCED NEGATIVE RESISTANCE IN SEMICONDUCTORS [J].
STEELE, MC ;
ANDO, K ;
LAMPERT, MA .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (11) :1729-&