AVALANCHE BREAKDOWN-DOUBLE INJECTION INDUCED NEGATIVE RESISTANCE IN SEMICONDUCTORS

被引：32

作者：

STEELE, MC

ANDO, K

LAMPERT, MA

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.17.1729

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1729 / &

共 5 条

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[2] AVALANCHE INJECTION IN SEMICONDUCTORS
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[3] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE
LAMPERT, MA
ROSE, A
[J]. PHYSICAL REVIEW, 1961, 121 (01): : 26 - &
[4] MUELLER CW, 1958, IRE T ELECTRON DEVIC, VED 5, P2
[5] LOW-FIELD ELECTROLUMINESCENCE IN INSULATING CRYSTALS OF CADMIUM SULFIDE
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[J]. PHYSICAL REVIEW, 1957, 105 (03): : 900 - 904