SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110)

被引：20

作者：

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

PATON, A ^{[1
]}

YEH, JL ^{[1
]}

TSANG, JC ^{[1
]}

KAHN, A ^{[1
]}

MARK, P ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：501 / 505

页数：5

共 21 条

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[2] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
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[3] CHADI DJ, UNPUBLISHED
[4] Duke C.B., 1974, DYNAMIC ASPECTS SURF, P99
[5] Duke C.B., 1974, ADV CHEM PHYS, V27, P1
[6] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
[7] SURFACE-STRUCTURE AND BONDING
DUKE, CB
[J]. MATERIALS SCIENCE AND ENGINEERING, 1976, 25 (SEP-O): : 13 - 17
[8] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS
DUKE, CB
MEYER, RJ
PATON, A
MARK, P
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4225 - 4240
[9] LOW-ENERGY-ELECTRON-DIFFRACTION ANALYSIS OF ATOMIC GEOMETRY OF ZNO(1010)
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LEE, BW
MARK, P
[J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4865 - 4873
[10] ANALYSIS OF ELEED INTENSITIES FROM ZNTE(110)
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SO, E
YEH, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 647 - 650