SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110)

被引:20
作者
DUKE, CB [1 ]
MEYER, RJ [1 ]
PATON, A [1 ]
YEH, JL [1 ]
TSANG, JC [1 ]
KAHN, A [1 ]
MARK, P [1 ]
机构
[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期
关键词
D O I
10.1116/1.570494
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:501 / 505
页数:5
相关论文
共 21 条
  • [11] ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES
    DUKE, CB
    [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1978, 8 (01): : 69 - 91
  • [12] INFLUENCE OF BOUNDARY-CONDITIONS AND OF ELECTRONIC AND VIBRATIONAL SURFACE PHENOMENA ON LOW-ENERGY-ELECTRON DIFFRACTION FROM LOW-INDEX FACES OF ALUMINUM
    DUKE, CB
    LIPARI, NO
    LANDMAN, U
    [J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2454 - 2467
  • [13] DUKE CB, UNPUBLISHED
  • [14] SURFACE AND NEAR-SURFACE ATOMIC-STRUCTURE OF GAAS (110)
    KAHN, A
    SO, E
    MARK, P
    DUKE, CB
    MEYER, RJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1223 - 1228
  • [15] Mark P., 1975, Critical Reviews in Solid State Sciences, V5, P189, DOI 10.1080/10408437508243480
  • [16] MEYER RA, UNPUBLISHED
  • [17] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS
    MEYER, RJ
    DUKE, CB
    PATON, A
    KAHN, A
    SO, E
    YEH, JL
    MARK, P
    [J]. PHYSICAL REVIEW B, 1979, 19 (10) : 5194 - 5205
  • [18] IONICITY OF CHEMICAL BOND IN CRYSTALS
    PHILLIPS, JC
    [J]. REVIEWS OF MODERN PHYSICS, 1970, 42 (03) : 317 - &
  • [19] SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110)
    TONG, SY
    LUBINSKY, AR
    MRSTIK, BJ
    VANHOVE, MA
    [J]. PHYSICAL REVIEW B, 1978, 17 (08): : 3303 - 3309
  • [20] WYCKOFF RWG, 1963, CRYST STRUCT, V1, P108