SURFACE AND NEAR-SURFACE ATOMIC-STRUCTURE OF GAAS (110)

被引：60

作者：

KAHN, A ^{[1
]}

SO, E ^{[1
]}

MARK, P ^{[1
]}

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,ROCHESTER,NY 14644

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1223 / 1228

页数：6

共 24 条

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[8] EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS
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[9] ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION FROM (100), (110), AND (111) FACES OF ALUMINUM
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[10] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
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