SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)

被引：196

作者：

LUBINSKY, AR

DUKE, CB

LEE, BW

MARK, P

机构：

[1] XEROX CORP WEBSTER RES CTR,WEBSTER,NY 14580

[2] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.36.1058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1058 / 1061

页数：4

共 24 条

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[8] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

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[9] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

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HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[10] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110) [J].

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ANDERSON, J .

PHYSICAL REVIEW LETTERS, 1975, 35 (02) :117-120

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