SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110)

被引：171

作者：

TONG, SY

LUBINSKY, AR

MRSTIK, BJ

VANHOVE, MA

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] CALTECH,DEPT CHEM ENGN,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.17.3303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3303 / 3309

页数：7

共 20 条

[1] RELAXATION EFFECTS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (10) : 4724 - 4726
[2] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS
DUKE, CB
LUBINSKY, AR
LEE, BW
MARK, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
[3] DUKE CB, UNPUBLISHED
[4] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS
GUDAT, W
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
[5] WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS
HUIJSER, A
VANLAAR, J
[J]. SURFACE SCIENCE, 1975, 52 (01) : 202 - 210
[6] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS
KNAPP, JA
LAPEYRE, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 757 - 760
[7] Relationship of surface-state band structure to surface atomic configuration of zinc blende (110)
Levine, J. D.
Freeman, S.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3255 - 3272
[8] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
LUBINSKY, AR
DUKE, CB
LEE, BW
MARK, P
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061
[9] MACRAE AU, 1964, J APPL PHYS, V35, P1629
[10] MACRAE AU, 1966, SEMICONDUCT SEMIMET, V2, P115