共 29 条
- [1] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2527 - 2538
- [2] ASPNES DE, UNPUBLISHED
- [3] SURFACE STATES OF (110) SURFACE OF GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (06): : L86 - L89
- [4] GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (23) : 1602 - 1604
- [5] ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES [J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5049 - 5056
- [6] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
- [10] Freeouf J. L., 1975, Critical Reviews in Solid State Sciences, V5, P245, DOI 10.1080/10408437508243482