GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING

被引：43

作者：

CHYE, PW ^{[1
]}

BABALOLA, IA ^{[1
]}

SUKEGAWA, T ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1103/PhysRevLett.35.1602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1602 / 1604

页数：3

共 12 条

[1] CHYE P, TO BE PUBLISHED
[2] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
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[3] SURFACE STATE BAND ON GAAS (110) FACE
GREGORY, PE
SPICER, WE
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HARRISON, WA
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 511 - 514
[4] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE
GREGORY, PE
SPICER, WE
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2370 - 2381
[5] GREGORY PE, TO BE PUBLISHED
[6] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110)
LAPEYRE, GJ
ANDERSON, J
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (02) : 117 - 120
[7] MACRAE AU, 1964, J APPL PHYS, V35, P1629
[8] PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 935 - 942
[9] SPICER WE, TO BE PUBLISHED
[10] ELECTRONIC PROPERTIES OF CLEAN AND CESIATED (110) SURFACES OF GASB
VILJOEN, PE
FISCHER, TE
JAZZAR, MS
[J]. SURFACE SCIENCE, 1972, 32 (03) : 506 - &