RELAXATION EFFECTS ON (110) SURFACE OF GAAS

被引：66

作者：

CHELIKOWSKY, JR

LOUIE, SG

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, MAT & MOLEC RES DIV, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.14.4724

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4724 / 4726

页数：3

共 28 条

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[9] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
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[10] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
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