LOCAL LATTICE DISTORTION RELATING TO PHOSPHORUS ANTISITE DEFECT IN PHOSPHORUS-ION-IMPLANTED GAP LAYER

被引：16

作者：

KURIYAMA, K ^{[1
]}

KATO, T ^{[1
]}

TAJIMA, S ^{[1
]}

KATO, T ^{[1
]}

TAKEDA, S ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 22期

关键词：

D O I：

10.1063/1.114255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The local lattice distortion relating to the phosphorus antisite defect (PGa) in the P+-ion-implanted GaP layer was studied using Rutherford backscattering (RBS), photoacoustic (PA), Raman scattering, and photoluminescence (PL) methods. The displacement fraction due to the excess phosphorus in 800°C annealed samples is estimated to be ∼2×1020/cm3 by RBS channeling measurements. The slight reduction of the LO-TO phonon frequency splitting of the annealed P+-ion-implanted GaP with respect to the unimplanted one indicates the presence of PGa, corresponding to x=0.0084 of Ga1-xP1+x. This is consistent with the displacement fraction estimated by RBS. A PL emission relating to PGa is observed at 716 mm (1.73 eV).© 1995 American Institute of Physics.

引用

页码：2995 / 2997

页数：3

共 13 条

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