LOCAL LATTICE DISTORTION RELATING TO PHOSPHORUS ANTISITE DEFECT IN PHOSPHORUS-ION-IMPLANTED GAP LAYER

被引:16
作者
KURIYAMA, K [1 ]
KATO, T [1 ]
TAJIMA, S [1 ]
KATO, T [1 ]
TAKEDA, S [1 ]
机构
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN
关键词
D O I
10.1063/1.114255
中图分类号
O59 [应用物理学];
学科分类号
摘要
The local lattice distortion relating to the phosphorus antisite defect (PGa) in the P+-ion-implanted GaP layer was studied using Rutherford backscattering (RBS), photoacoustic (PA), Raman scattering, and photoluminescence (PL) methods. The displacement fraction due to the excess phosphorus in 800°C annealed samples is estimated to be ∼2×1020/cm3 by RBS channeling measurements. The slight reduction of the LO-TO phonon frequency splitting of the annealed P+-ion-implanted GaP with respect to the unimplanted one indicates the presence of PGa, corresponding to x=0.0084 of Ga1-xP1+x. This is consistent with the displacement fraction estimated by RBS. A PL emission relating to PGa is observed at 716 mm (1.73 eV).© 1995 American Institute of Physics.
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页码:2995 / 2997
页数:3
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