EPR INVESTIGATIONS OF THE DEFECT CHEMISTRY OF SEMI-INSULATING GAAS-CR

被引：15

作者：

GOLTZENE, A

POIBLAUD, G

SCHWAB, C

机构：

[1] Laboratoire de Spectroscopie et d'Optique du Corps Solide, Associé Au C.N.R.S. no232, Université Louis Pasteur, 67 000 Strasbourg

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of some heat treatments under various atmospheres (vacuum, As, Ga2O3, or H2) on GaAs: Cr samples have been investigated by EPR. The equilibria between the two valence states Cr + and Cr2+ seem to depend on various parameters such as the total amount of Cr, and other defects such as the iron contaminant. A new paramagnetic defect, occurring at g=2.002±0.001 has been identified, whose intensity is highest after the H2 anneal.

引用

页码：5425 / 5430

页数：6

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