DEPENDENCE OF CAPTURE RATE ON ELECTRIC FIELD AND POSSIBILITY OF NEGATIVE RESISTANCE IN SEMICONDUCTORS

被引：42

作者：

RIDLEY, BK

WATKINS, TB

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1961年 / 78卷 / 503期

关键词：

D O I：

10.1088/0370-1328/78/5/309

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：710 / &

共 9 条

[1] CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM [J].

BATTEY, JF ;

BAUM, RM .

PHYSICAL REVIEW, 1955, 100 (06) :1634-1637

[2]

BATTEY JF, 1955, PHYS REV, V98, P923

[3]

CONWELL EM, 1961, J PHYS CHEM SOLIDS, V17, P342

[4]

JOHNSTON L, 1960, PHYS REV, V113, P1191

[5]

PEKAR SI, 1950, ZH EKSP TEOR FIZ, V20, P267

[6] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

[7] COPPER IN GERMANIUM - RECOMBINATION CENTER AND TRAPPING CENTER [J].

SHULMAN, RG ;

WYLUDA, BJ .

PHYSICAL REVIEW, 1956, 102 (06) :1455-1457

[8] TRIPLE ACCEPTORS IN GERMANIUM [J].

WOODBURY, HH ;

TYLER, WW .

PHYSICAL REVIEW, 1957, 105 (01) :84-92

[9]

YAMASHITA J, 1954, PROG THEOR PHYS, V12, P443