COPPER IN GERMANIUM - RECOMBINATION CENTER AND TRAPPING CENTER

[1] ELECTRON CAPTURE PROBABILITY OF THE UPPER COPPER ACCEPTOR LEVEL IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 98 (04): : 923 - 925

[2] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524

[3] BURTON, 1953, J CHEM PHYS, V21, P1991

[4] BURTON, 1953, J PHYS CHEM, V57, P102

[5] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1953, 92 (06): : 1424 - 1428

[6] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153

[7] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[8] MORIN FJ, 1953, PHYS REV, V90, P337

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[10] HOLE TRAPPING IN GERMANIUM BOMBARDED BY HIGH-ENERGY ELECTRONS [J]. PHYSICAL REVIEW, 1956, 102 (06): : 1451 - 1455

[1] ELECTRON CAPTURE PROBABILITY OF THE UPPER COPPER ACCEPTOR LEVEL IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 98 (04): : 923 - 925

[2] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524

[3] BURTON, 1953, J CHEM PHYS, V21, P1991

[4] BURTON, 1953, J PHYS CHEM, V57, P102

[5] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1953, 92 (06): : 1424 - 1428

[6] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153

[7] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[8] MORIN FJ, 1953, PHYS REV, V90, P337

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[10] HOLE TRAPPING IN GERMANIUM BOMBARDED BY HIGH-ENERGY ELECTRONS [J]. PHYSICAL REVIEW, 1956, 102 (06): : 1451 - 1455