LIFETIME OF ELECTRONS IN P-TYPE SILICON

[1] BURTON, 1953, J PHYS CHEM-US, V57, P853

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[3] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[4] TRANSIENT RESPONSE OF A P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154

[5] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[6] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420

[1] BURTON, 1953, J PHYS CHEM-US, V57, P853

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[3] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[4] TRANSIENT RESPONSE OF A P-N JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154

[5] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[6] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420