HOLE TRAPPING IN GERMANIUM BOMBARDED BY HIGH-ENERGY ELECTRONS

[1] BROWN, 1954, PHYS REV, V96, pA834

[2] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1953, 92 (06): : 1424 - 1428

[3] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153

[4] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[5] MOTT NF, 1948, ELECTRONIC PROCESSES, P128

[1] BROWN, 1954, PHYS REV, V96, pA834

[2] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1953, 92 (06): : 1424 - 1428

[3] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153

[4] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321

[5] MOTT NF, 1948, ELECTRONIC PROCESSES, P128