FIELD-EFFECT TRANSISTORS USING BORON-DOPED DIAMOND EPITAXIAL-FILMS

[1] BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829

[2] BOGDANOV AV, 1982, SOV PHYS SEMICOND+, V16, P720

[3] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J]. VACUUM, 1986, 36 (1-3) : 99 - 102

[4] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 341 - 343

[5] KONOROVA EA, 1983, SOV PHYS SEMICOND+, V17, P146

[6] LATTICE SCATTERING AND EFFECTIVE MASS OF HOLES IN NATURAL DIAMOND [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 333 - 335

[7] SHIOMI H, 1990, IN PRESS JPN J APPL, V29

[8] CRYSTALLIZATION OF DIAMOND AND GRAPHITE [J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (09) : 3668 - +

[9] TOULOUKIAN YS, 1970, THERMOPHYSICAL PROPE, V2, P12

[1] BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829

[2] BOGDANOV AV, 1982, SOV PHYS SEMICOND+, V16, P720

[3] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J]. VACUUM, 1986, 36 (1-3) : 99 - 102

[4] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 341 - 343

[5] KONOROVA EA, 1983, SOV PHYS SEMICOND+, V17, P146

[6] LATTICE SCATTERING AND EFFECTIVE MASS OF HOLES IN NATURAL DIAMOND [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 333 - 335

[7] SHIOMI H, 1990, IN PRESS JPN J APPL, V29

[8] CRYSTALLIZATION OF DIAMOND AND GRAPHITE [J]. JOURNAL OF CHEMICAL PHYSICS, 1967, 46 (09) : 3668 - +

[9] TOULOUKIAN YS, 1970, THERMOPHYSICAL PROPE, V2, P12