PHOTO-LUMINESCENCE OF CDIN2S4 SINGLE-CRYSTALS - RECOMBINATION PROCESS AND LOCALIZED LEVELS

被引:32
作者
GRILLI, E [1 ]
GUZZI, M [1 ]
CAPPELLETTI, P [1 ]
MOSKALONOV, AV [1 ]
机构
[1] CNR,GRP NAZL STRUTTURA MAT,I-20133 MILAN,ITALY
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 59卷 / 02期
关键词
D O I
10.1002/pssa.2210590243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:755 / 765
页数:11
相关论文
共 38 条
[1]  
ABDULLAEV GB, 1973, SOV PHYS SEMICOND+, V6, P1492
[2]  
ABDULLAEV GB, 1974, SOV PHYS SEMICOND+, V8, P785
[3]  
ALLAKHVERDIEV KP, 1972, SOV PHYS SEMICOND+, V5, P2080
[4]   STUDY OF THE BAND EDGE IN CDIN2S4 BY PHOTO-VOLTAIC EFFECT [J].
ANEDDA, A ;
FORTIN, E .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (09) :653-656
[5]   PHOTOCONDUCTIVITY AND TRAP DISTRIBUTION IN CDIN2S4 [J].
ANEDDA, A ;
GARBATO, L ;
RAGA, F ;
SERPI, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 50 (02) :643-650
[6]   FUNDAMENTAL OPTICAL-CONSTANTS OF THE LAYERED SEMICONDUCTOR ZNIN2S4 [J].
ANEDDA, A ;
CUGUSI, L ;
GRILLI, E ;
GUZZI, M ;
RAGA, F ;
SPIGA, A .
SOLID STATE COMMUNICATIONS, 1979, 29 (12) :829-834
[7]   TRANSPORT PROPERTIES OF CDIN2S4 SINGLE-CRYSTALS [J].
ARESTI, A ;
CONGIU, A .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01) :K55-K58
[8]  
Baldereschi A., 1977, I PHYS C SER, V35, P193
[9]   OPTICAL PROPERTIES OF A QUASI-DISORDERED SEMICONDUCTOR - ZNIN2S4 [J].
BOSACCHI, A ;
BOSACCHI, B ;
FRANCHI, S ;
HERNANDEZ, L .
SOLID STATE COMMUNICATIONS, 1973, 13 (11) :1805-1809
[10]   ENVIRONMENT AROUND YB-3+ IN CDIN2S4 [J].
BROWN, MR ;
MARTIN, MD ;
SHAND, WA .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06) :1329-&