SCANNING ELECTRON-MICROSCOPE CHARGE-COLLECTION IMAGES OF GRAIN-BOUNDARIES

[1] ANDERSEN CA, 1966, ELECTRON MICROPROBE, P58

[2] AUTHIER B, 1978, FESTKORPERPROBLEME, V18, P1

[3] BLOSS WH, 1980, 3RD EC PHOT SOL EN C, P340

[4] COMPUTER-SIMULATION OF SEM ELECTRON-BEAM INDUCED CURRENT IMAGES OF DISLOCATIONS AND STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1624 - 1633

[5] CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 80 - 81

[6] QUANTITATIVE PROPERTIES OF SEM-EBIC IMAGES OF STACKING-FAULTS IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L771 - L774

[7] DONOLATO C, 1979, 12TH P ANN SEM S, P257

[8] DRESCHER H, 1970, Z ANGEW PHYSIK, V29, P331

[9] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[10] LOW-COST SOLAR-CELLS BASED ON LARGE-AREA UNCONVENTIONAL SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 438 - 442

[1] ANDERSEN CA, 1966, ELECTRON MICROPROBE, P58

[2] AUTHIER B, 1978, FESTKORPERPROBLEME, V18, P1

[3] BLOSS WH, 1980, 3RD EC PHOT SOL EN C, P340

[4] COMPUTER-SIMULATION OF SEM ELECTRON-BEAM INDUCED CURRENT IMAGES OF DISLOCATIONS AND STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1624 - 1633

[5] CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 80 - 81

[6] QUANTITATIVE PROPERTIES OF SEM-EBIC IMAGES OF STACKING-FAULTS IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L771 - L774

[7] DONOLATO C, 1979, 12TH P ANN SEM S, P257

[8] DRESCHER H, 1970, Z ANGEW PHYSIK, V29, P331

[9] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[10] LOW-COST SOLAR-CELLS BASED ON LARGE-AREA UNCONVENTIONAL SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 438 - 442