SEMICONDUCTOR-DEVICES SUITABLE FOR USE IN CRYOGENIC ENVIRONMENTS

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 775 - +

[2] AIGRIN P, 1961, SELECTED CONSTANTS R

[3] AZAROFF LV, 1963, ELECTRONIC PROCESSES, pCH8

[4] Barton L. E., 1962, ELECTRONICS, V35, P38

[5] BEATTIE RA, 1959, P ROY SOC LONDON, VA249, P16

[6] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514

[7] MAGNETIC SUSCEPTIBILITY MEASUREMENTS WITH A TUNNEL DIODE OSCILLATOR [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (05) : 617 - &

[8] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[9] EDMOND JT, 1956, SEMICONDUCTOR M REPO, P109

[10] ELAD E, 1968, THESIS U CALIFORNIA

[1] SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 775 - +

[2] AIGRIN P, 1961, SELECTED CONSTANTS R

[3] AZAROFF LV, 1963, ELECTRONIC PROCESSES, pCH8

[4] Barton L. E., 1962, ELECTRONICS, V35, P38

[5] BEATTIE RA, 1959, P ROY SOC LONDON, VA249, P16

[6] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514

[7] MAGNETIC SUSCEPTIBILITY MEASUREMENTS WITH A TUNNEL DIODE OSCILLATOR [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (05) : 617 - &

[8] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[9] EDMOND JT, 1956, SEMICONDUCTOR M REPO, P109

[10] ELAD E, 1968, THESIS U CALIFORNIA