(ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：185

作者：

FUKUI, T

SAITO, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 13期

关键词：

D O I：

10.1063/1.98056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：824 / 826

页数：3

相关论文

共 5 条

[1] ASAI H, UNPUB J CRYST GROWTH
[2] (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD
FUKUI, T
SAITO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L521 - L523
[3] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY
PETROFF, PM
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 620 - 622
[4] SCATTERING SUPPRESSION AND HIGH-MOBILITY EFFECT OF SIZE-QUANTIZED ELECTRONS IN ULTRAFINE SEMICONDUCTOR WIRE STRUCTURES
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L735 - L738
[5] WARREN AC, 1985, IEEE ELECTRON DEVICE, V6, P293