ENHANCED RELAXATION OSCILLATION FREQUENCY AND REDUCED NONLINEAR K-FACTOR IN INGAAS/INGAASP MQW LAMBDA-4-SHIFTED DFB LASERS

被引:19
作者
AOKI, M
UOMI, K
TSUCHIYA, T
SUZUKI, M
CHINONE, N
机构
[1] Central Research Laboratory Hitachi Ltd., Tokyo 185, Kokubunji
关键词
Lasers and laser applications; Semiconductor lasers;
D O I
10.1049/el:19901185
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The relaxation oscillation frequency, f2, of 1.55μm InGaAs/InGaAsP MQW λ/4-shifted DFB lasers was doubled by increasing the carrier injection efficiency into each quantum well, which results from an optimised bandgap energy and optimised thickness of the barrier layers. The nonlinear Kfactor which determines the maximum modulation bandwidth through the damping phenomenon can be reduced by adopting a p-type modulation doped MQW structure in the active layer. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1841 / 1843
页数:3
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