SENSITIVITY OF ION INDUCED X-RAY-ANALYSIS FOR SURFACE-LAYERS ON THICK SILICON SUBSTRATES

Surface contaminations on silicon slices and contaminations in surface layers deposited on thick silicon substrates were investigated by means of ion induced X-ray analysis. Sensitivity limits of foreign atoms are given for proton and nitrogen impact in dependence of projectile energies. They were derived using calculated K-shell ionization cross-sections as well as measured X-ray and γ-ray background spectra. The validity of the model used for characteristic cross-section calculations was proved by comparing the theoretical with experimental results. Some examples are given for the analysis of the basic material for the production of semiconductor electronic devices. © 1979 Akadémiai Kiadó.