ENHANCED PENETRATION OF LOW-ENERGY (25 EV-5000 EV) HELIUM ALONG THE (100) CHANNEL IN TUNGSTEN

被引：20

作者：

KORNELSEN, EV

VANGORKUM, AA

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1980年 / 170卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(80)91004-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：161 / 170

页数：10

共 26 条

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[6] CRITICAL ANGLES FOR CHANNELING OF LOW ENERGY IONS IN TUNGSTEN
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[8] CRITICAL CHANNELING ANGLES OF LOW-ENERGY IONS IN SILICON
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[9] ATTACHMENT OF MOBILE PARTICLES TO NON-SATURABLE TRAPS .2. TRAPPING OF HELIUM AT XENON ATOMS IN TUNGSTEN
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2): : 113 - 124
[10] ENTRAPMENT OF HELIUM IONS AT (100) AND (110) TUNGSTEN SURFACES
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[J]. CANADIAN JOURNAL OF PHYSICS, 1970, 48 (23) : 2812 - +

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