CRITICAL ANGLES FOR CHANNELING OF LOW ENERGY IONS IN TUNGSTEN

被引：29

作者：

BERGSTRO.I

BJORKQVI.K

DOMEIJ, B

FLADDA, G

ANDERSEN, S

机构：

来源：

关键词：

D O I：

10.1139/p68-635

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2679 / &

共 6 条

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[2] ANDREEN CJ, 1967, PHYS LETTERS, VA 24, P118
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BOGH, E
UGGERHOJ, E
[J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 216 - &
[4] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &
[5] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON
DAVIES, JA
DENHARTOG, J
WHITTON, JL
[J]. PHYSICAL REVIEW, 1968, 165 (02): : 345 - +
[6] Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34