HALOGEN ADSORPTION ON N-MOSE2 (0001) VANDERWAALS FACES - SIMULATION OF ELECTROCHEMICAL JUNCTIONS IN UHV

被引：20

作者：

JAEGERMANN, W

机构：

[1] Hahn-Meitner-Inst, Berlin, West Ger, Hahn-Meitner-Inst, Berlin, West Ger

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1988年 / 92卷 / 04期

关键词：

D O I：

10.1002/bbpc.198800122

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：537 / 544

页数：8

共 56 条

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