X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION ON THE CHEMICAL-STRUCTURE OF AMORPHOUS-SILICON NITRIDE (A-SINX)

被引:128
作者
INGO, GM
ZACCHETTI, N
DELLASALA, D
COLUZZA, C
机构
[1] ENIRICERCHE SPA,I-00015 ROME,ITALY
[2] UNIV LA SAPIENZA,DIPARTIMENTO FIS,I-00185 ROME,ITALY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 05期
关键词
D O I
10.1116/1.576314
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:3048 / 3055
页数:8
相关论文
共 32 条
  • [1] STRUCTURE OF INTERFACES IN A-SI-H/A-SINX-H SUPERLATTICES
    ABELES, B
    PERSANS, PD
    STASIEWSKI, HS
    YANG, L
    LANFORD, W
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1065 - 1068
  • [2] BATTACHARYA R, 1981, APPL PHYS LETT, V38, P545
  • [3] Cardinaud C., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P473
  • [4] COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241
  • [5] COLUZZA C, 1983, J NON-CRYST SOLIDS, V59-6, P723, DOI 10.1016/0022-3093(83)90273-9
  • [6] NITROGEN 1S CHARGE REFERENCING FOR SI3N4 AND RELATED-COMPOUNDS
    DONLEY, MS
    BAER, DR
    STOEBE, TG
    [J]. SURFACE AND INTERFACE ANALYSIS, 1988, 11 (6-7) : 335 - 340
  • [7] ELECTRON AND ION-BEAM DEGRADATION EFFECTS IN AES ANALYSIS OF SILICON-NITRIDE THIN-FILMS
    FRANSEN, F
    VANDENBERGHE, R
    VLAEMINCK, R
    HINOUL, M
    REMMERIE, J
    MAES, HE
    [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (02) : 79 - 87
  • [8] ESCA STUDY OF ORGANOSILICON COMPOUNDS
    GRAY, RC
    CARVER, JC
    HERCULES, DM
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (05) : 343 - 357
  • [9] PHOTOELECTRON-SPECTRA OF FLUORINATED AMORPHOUS-SILICON (A-SI-F)
    GRUNTZ, KJ
    LEY, L
    JOHNSON, RL
    [J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2069 - 2080
  • [10] CHARGE-DENSITY VARIATION IN A MODEL OF AMORPHOUS-SILICON
    GUTTMAN, L
    CHING, WY
    RATH, J
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (23) : 1513 - 1516