ELECTRON AND ION-BEAM DEGRADATION EFFECTS IN AES ANALYSIS OF SILICON-NITRIDE THIN-FILMS

被引：32

作者：

FRANSEN, F

VANDENBERGHE, R

VLAEMINCK, R

HINOUL, M

REMMERIE, J

MAES, HE

机构：

[1] BELL TEL MFG CO,GASMETERLAAN 106,B-9000 GHENT,BELGIUM

[2] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM

来源：

关键词：

D O I：

10.1002/sia.740070205

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：79 / 87

页数：9

共 8 条

BAILEY, RS ;

KAPOOR, VJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :484-487

[2] PREFERENTIAL SPUTTERING OF SI3N4 [J].

BHATTACHARYA, RS ;

HOLLOWAY, PH .

[3]

Fontaine J. M., 1979, Surface and Interface Analysis, V1, P196, DOI 10.1002/sia.740010606

[4]

KAPOOR VJ, 1981, J VAC SCI TECHNOL, V18, P305, DOI 10.1116/1.570747

[5]

MAES HE, 1983, P ELECTROCHEM SOC, V83, P415

[6]

Malinowski E. R., 1980, FACTOR ANAL CHEM, V3

[7] ELECTRON-BEAM DAMAGE IN AUGER-ELECTRON SPECTROSCOPY [J].

PANTANO, CG ;

MADEY, TE .

[8]

THOMAS S, 1979, J ELECTROCHEM SOC, V124, P1942