PREFERENTIAL SPUTTERING OF SI3N4

被引：31

作者：

BHATTACHARYA, RS ^{[1
]}

HOLLOWAY, PH ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

关键词：

D O I：

10.1063/1.92446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：545 / 546

页数：2

共 12 条

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[2] Bottiger J., 1971, Radiation Effects, V11, P69, DOI 10.1080/00337577108230451
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[4] HOLLOWAY PH, UNPUBLISHED
[5] ATTEMPT TO UNDERSTAND PREFERENTIAL SPUTTERING
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 553 - 558
[6] KUBASCHEWSKI O, 1967, METALLURGICAL THERMO, P303
[7] SPUTTERING OF AN AGAU ALLOY BY BOMBARDMENT WITH 6 KEV XE+ IONS
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BHATTACHARYA, RS
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[8] MASS AND ENERGY-DEPENDENCE OF EQUILIBRIUM SURFACE COMPOSITION OF SPUTTERED TANTALUM OXIDE
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[9] An Attempt at the AES Evaluation of the Composition of Off-Stoichiometric Silicon Nitride
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1942 - 1945
[10] CHANGE OF SURFACE COMPOSITION OF SIO2 LAYERS DURING SPUTTERING
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VANDERWE.WF
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2777 - 2779