An Attempt at the AES Evaluation of the Composition of Off-Stoichiometric Silicon Nitride

被引：46

作者：

Thomas, Simon ^{[1
]}

Mattox, Robert J. ^{[2
]}

机构：

[1] Burroughs Corp, San Diego, CA 92127 USA

[2] Motorola Semicond Grp, Phoenix, AZ 85008 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 12期

关键词：

plasma silicon nitride; Auger analysis; nitride passivation; layer;

D O I：

10.1149/1.2133201

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1942 / 1945

页数：5

共 14 条

[1]

Bell A.T., 1974, TECHNIQUES APPL PLAS

[2] STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS [J].

DALTON, JV ;

DROBEK, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :865-+

[3] EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS [J].

GYULAI, J ;

MEYER, O ;

MAYER, JW ;

RODRIGUEZ, V .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :451-+

[4] ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

GYULAI, J ;

MEYER, O ;

MAYER, JW ;

RODRIGUE.V .

APPLIED PHYSICS LETTERS, 1970, 16 (06) :232-&

[5] QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON [J].

HOLLOWAY, PH ;

STEIN, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :723-728

[6] CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE [J].

HOLLOWAY, PH .

SURFACE SCIENCE, 1976, 54 (02) :506-508

[7] AUGER DEPTH PROFILING OF INTERFACES IN MOS AND MNOS STRUCTURES [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :849-855

[8]

JOYCE RJ, 1968, THIN SOLID FILMS, V1, P481

[9] DETECTION OF SILICON-OXYNITRIDE LAYERS ON SURFACE OF SILICON-NITRIDE FILMS BY AUGER ELECTRON EMISSION [J].

MAGUIRE, HG ;

AUGUSTUS, PD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :791-&

[10]

PAULSON WM, 1974, 12 ANN REL PHYS S LA

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