PREFERENTIAL SPUTTERING OF TA2O5 BY ARGON IONS

被引：63

作者：

HOLLOWAY, PH ^{[1
]}

NELSON, GC ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.570088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy has been used to show that Ar** plus preferentially sputters O from the surface to Ta//2O//5. In addition, x-ray photoelectron, Auger electron, ion scattering, and secondary ion mass spectroscopies were used to show that more reduction of Ta//2O//5 is caused by 0. 5 keV Ar** plus than by 5 keV Ar** plus . This dependence of preferred sputtering upon energy is attributed to changes in the sputtering mechanisms.

引用

页码：793 / 796

页数：4

共 24 条

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