CONDUCTING FILAMENTS AND SWITCHING PHENOMENA IN CHALCOGENIDE SEMICONDUCTORS

被引：23

作者：

NAKASHIMA, K ^{[1
]}

KAO, KC ^{[1
]}

机构：

[1] UNIV MANITOBA,DEPT ELECT ENGN,MAT RES LAB,WINNIPEG R3T 2N2,MANITOBA,CANADA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 33卷 / 02期

关键词：

D O I：

10.1016/0022-3093(79)90049-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：189 / 204

页数：16

共 28 条

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[2]

Bagley B. G., 1970, Journal of Non-Crystalline Solids, V2, P155, DOI 10.1016/0022-3093(70)90131-6

[3] PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES [J].

BOSNELL, JR ;

THOMAS, CB .

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[4] ELECTRICAL CHARACTERISTICS AND THRESHOLD SWITCHING IN AMORPHOUS-SEMICONDUCTORS [J].

BUCKLEY, WD ;

HOLMBERG, SH .

SOLID-STATE ELECTRONICS, 1975, 18 (02) :127-&

[5]

Chen H. S., 1970, Physica Status Solidi A, V2, P79, DOI 10.1002/pssa.19700020109

[6] SWITCHING AND MEMORY PHENOMENA IN ANTHRACENE THIN-FILMS [J].

ELSHARKAWI, AR ;

KAO, KC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1977, 38 (01) :95-96

[7]

Fritzsche H., 1970, Journal of Non-Crystalline Solids, V2, P393, DOI 10.1016/0022-3093(70)90156-0

[8]

Henisch H. K., 1970, Journal of Non-Crystalline Solids, V4, P538, DOI 10.1016/0022-3093(70)90091-8

[9]

HENISCH HK, 1974, AMORPHOUS LIQUID SEM, V1, P567

[10] PROBLEM OF SWITCHING EFFECT IN AMORPHOUS SEMI-CONDUCTORS [J].

HEYWANG, W ;

HABERLAND, DR .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1077-+

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