THE PREPARATION OF EPITAXIAL PLATINUM FILMS BY PULSED LASER DEPOSITION

被引:30
作者
LEUCHTNER, RE
CHRISEY, DB
HORWITZ, JS
GRABOWSKI, KS
机构
[1] Naval Research Laboratory, Washington, DC 20375-5000, 4555 Overlook Avenue, S.W.
关键词
D O I
10.1016/0257-8972(92)90285-I
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A systematic study of the effects of ambient deposition pressure P(d) and substrate temperature T(s) on the morphology and crystal structure of platinum films deposited onto [100] MgO by pulsed laser deposition (PLD) is presented. Depositions were performed over a T(s) range of 20-650-degrees-C and a P(d) range of 10(-5)-1 Torr of O2. Different crystallographic orientations and a dramatic change in morphology were observed as a function of P(d) and T(s). For depositions performed at room temperature and for pressures greater than 10(-5) Torr, the films were comprised of mostly platinum oxide. At T(s) of 350-500-degrees-C and at all pressures studied, the platinum films were very smooth and oriented. At T(s) > 500-degrees-C. deposited films were characterized by islands whose average diameter varied from several nanometers to over a micrometer depending on the average film thickness; islands were prevalent P(d) greater-than-or-equal-to 0.05 Torr. Over the broad range of conditions examined, the film crystal structure varied from (100) epitaxy with a rocking curve width of less than 0.2-degrees, to films of mixed (100) and (111) preferred orientations. At a given T(s), the deposition rate per laser shot was found to depend on P(d). In general, the deposition rate was found to increase monotonically from about 0.1 angstrom per shot at 10(-5) Torr to a maximum of about 0.16 angstrom per shot near 0.05 Torr, then decrease to a minimum of about 0.08 angstrom per shot near 0.3 Torr and then increase again at pressures greater than 0.3 Torr. These effects can be explained in terms of a combination of gas dynamic processes and gas-surface interactions which occur between the platinum atoms and the oxygen molecules during deposition.
引用
收藏
页码:476 / 482
页数:7
相关论文
共 22 条
  • [1] ATKINS PW, 1978, PHYSICAL CHEM
  • [2] DEPOSITION OF SIC FILMS BY PULSED EXCIMER LASER ABLATION
    BALOOCH, M
    TENCH, RJ
    SIEKHAUS, WJ
    ALLEN, MJ
    CONNOR, AL
    OLANDER, DR
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1540 - 1542
  • [3] FERROELECTRIC (PB,BA)NB2O6 NEAR THE MORPHOTROPIC PHASE-BOUNDARY
    BURNS, G
    DACOL, FH
    GUO, R
    BHALLA, AS
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (06) : 543 - 544
  • [4] GROWTH OF THIN-FILMS BY LASER-INDUCED EVAPORATION
    CHEUNG, JT
    SANKUR, H
    [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01): : 63 - 109
  • [5] EXCIMER LASER ABLATION OF A YBA2CU3O7-DELTA TARGET IN A VACUUM - CHARACTERIZATION OF THE MASS AND ENERGY OF EJECTED MATERIAL
    CHRISEY, DB
    HORWITZ, JS
    LEUCHTNER, RE
    [J]. THIN SOLID FILMS, 1991, 206 (1-2) : 111 - 115
  • [6] CHRISEY DB, 1990, MATER RES SOC SYMP P, V191, P25, DOI 10.1557/PROC-191-25
  • [7] COTELL CA, IN PRESS J APPL BIOM
  • [8] FERNANDEZ H, 1988, J LESS-COMMON MET, V99, P99
  • [9] SIO2 THIN-FILM DEPOSITION BY EXCIMER LASER ABLATION FROM SIO TARGET IN OXYGEN ATMOSPHERE
    FOGARASSY, E
    FUCHS, C
    SLAOUI, A
    STOQUERT, JP
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (07) : 664 - 666
  • [10] TIME-RESOLVED LUMINESCENCE SPECTROSCOPY OF PLASMA EMISSION FROM LASER ABLATION OF BI-SR-CA-CU OXIDE SUPERCONDUCTOR AND RELATED MATERIALS
    FUKUMURA, H
    NAKAMINAMI, H
    EURA, S
    MASUHARA, H
    KAWAI, T
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (22) : 2546 - 2548